A wide-band gap, high-performance semiconductor called gallium nitride (GaN) will soon take the place of the conventional silicon-based MOSFET technology. This is so that GaN devices can meet the fundamental conditions for boosting the power density of any electronic device, which are higher switching speeds and higher thermal conductivity. 
Almost every system that relies on electronics and has several modules operating at different voltage levels employs DC-DC power converters. Increasing the power density and thermal performance of a module has been the top …